to ? 92 1.collect or 2.base 3.emitter jiangsu changjiang elec tron ics technology co., ltd to -92 plastic-encapsulate transistors BC516 transistor (pnp) fea tures z high dc current gain z high collector current maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c = -0.1ma,i e =0 -40 v collecto r-emitter breakdown v (br)ce o i c =-2m a,i b =0 -30 v emitter-ba se breakdown voltage v (br )ebo i e =-10 a,i c =0 -10 v collecto r cut-off current i cbo v cb =- 30v,i e =0 -0 .1 a dc curr ent gain h fe v ce =-2v , i c =- 20ma 30000 collecto r-emitter saturation voltage v ce(sa t) i c =- 100ma,i b =- 0.1ma -1 v base -emitter saturation voltage v be(sat) i c =- 100ma,i b =- 0.1ma -1.5 v base-emitter vo ltage v be v ce =-5v , i c =-10 ma -1.4 v tr ansition frequency f t v ce =-5v ,i c =- 10ma, f=100mhz 200 mhz symbol paramete r value unit v cbo collector-bas e voltage -40 v v ceo collector-emitter v oltage -30 v v ebo emitter-base vo ltage -10 v i c collector curr ent -1 a p c collector po wer dissipation 625 mw r ja thermal resist ance junction to ambient 200 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 c, aug,201 6
min max min max a 3 .300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.400 4.700 0.173 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 2 , ,201
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,aug,2016
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